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| to ? 92 1. emitter 2. collector 3. base to-92 plastic-encapsulate transistors 2SC536 transistor (npn) features z general purpose amplifier transistor maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.1ma,i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 30 v emitter-base breakdown voltage v (br)ebo i e =0.1ma,i c =0 5 v collector cut-off current i cbo v cb =35v,i e =0 1 a emitter cut-off current i ebo v eb =4v,i c =0 1 a dc current gain h fe v ce =6v, i c =1ma 60 960 collector-emitter saturation voltage v ce(sat) i c =50ma,i b =5ma 0.5 v collector output capacitance c ob v cb =6v, f=1mhz 3.5 pf transition frequency f t v ce =6v,i c =1ma 100 mhz classification of h fe rank d e f g h range 60-120 100-200 160-320 280-560 480-960 symbol parameter value unit v cbo collector-base voltage 40 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 5 v i c collector current 0.1 a p c collector power dissipation 0.4 w r ja thermal resistance from junction to ambient 312 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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